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2STC4467 – Bipolar (BJT) Transistor NPN 120 V 8 A 20MHz 80 W Through Hole TO-3P from STMicroelectronics. Pricing and Availability on millions of electronic ...
Di***ey : High power NPN epitaxial planar bipolar transistor
2STC4467. High power NPN epitaxial planar bipolar transistor. Features. □ High breakdown voltage VCEO = 120 V. □.comlementary to 2STA1694.
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2STC4467 STMicroelectronics Bipolar Transistors - BJT High power NPN Bipolar transistor datasheet, inventory, & pricing.
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2STC4467 High power NPN epitaxial planar bipolar transistor Features □ High breakdown voltage VCEO = 120 V □.comlementary to 2STA1694 □ Fast-switching speed ...
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Type Designator: 2STC4467. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 80 W. Maximum Collector-Base Voltage |Vcb|: ...
Ar*** Electronics : 2STC4467 by STMicroelectronics | GP BJT
STMicroelectronics 2STC4467 GP BJT. Trans GP BJT NPN 120V 8A 80000mW 3-Pin(3+Tab) TO-3P Tube. Download Datasheet. Symbols and Footprints.
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Download the 2STC4467 datasheet from STMicroelectronics. Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin.
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2STC4467, Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3P Tube (50 Items) ; Item Weight, 0.01 ounces ; Manufacturer, STMicroelectronics ; ASIN, B07N6KNWTB ; Item ...
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New Original 10Pairs 2SA1694 + 2SC4467 or 2STA1694 + 2STC4467 TO-3P Silicon PNP + NPN Epitaxial Planar Transistor. Delivery. Shipping: US $97