On***i : NVHL160N120SC1
NVHL160N120SC1. Features. • Typ. RDS(on)= 160 mΩ. • Ultra Low Gate Charge (typ. QG(tot) = 34 nC). • Low Effective Output Capacitance (typ. Coss= 50 pF).
On***i : Silicon Carbide (SiC) MOSFETs | NVHL160N120SC1
EliteSiC MOSFET uses a new technology that provide superior switching performance and higher reliability to Silicon.
Di***ey : NVHL160N120SC1 - Discrete Semiconductor Products
Order today, ships today. NVHL160N120SC1 – N-Channel 1200 V 17A (Tc) 119W (Tc) Through Hole TO-247-3 from onsemi. Pricing and Availability on millions of ...
Mo***r Electronics : NVHL160N120SC1 onsemi
Mfr. #:. NVHL160N120SC1 · Mfr.: onsemi · Description: MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide ...
Fu***e Electronics : NVHL160N120SC1 in Tube by onsemi | Silicon Carbide ...
Buy onsemi NVHL160N120SC1 in Tube. Single N-Channel 1200 V 17 A 119 W Surface Mount SiC Power Mosfet - TO-247-3 from Future Electronics.
Av*** : NVHL160N120SC1 by onsemi Single MOSFETs
NVHL160N120SC1. Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET ...
Oc***art : NVHL160N120SC1 | Distributors, Price, and ...
Technical. Continuous Drain Current (ID), 17 A. Drain to Source Breakdown Voltage, 1.2 kV. Drain to Source Resistance, 162 mΩ.
el***nt14 : NVHL160N120SC1 - Onsemi - Silicon Carbide MOSFET, ...
Buy NVHL160N120SC1 - Onsemi - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 17 A, 1.2 kV, 0.162 ohm, TO-247. element14 New Zealand offers special ...
eB*** : [4x] NVHL160N120 NVHL160N120SC1 MOSFET, N-CH, ...
[4x] NVHL160N120 NVHL160N120SC1 MOSFET, N-CH, 1200V, 160 mOhm SILICON CARBIDE ; Condition. New ; Quantity. 4 available ; Item Number. 175569448145 ; Brand. ON ...
AL***TASHEET : NVHL160N120SC1 Datasheet(PDF) - ON Semiconductor
MOSFET - SiC Power, Single N-Channel 1200 V, 160 m , 17 A, NVHL160N120SC1 Datasheet, NVHL160N120SC1 circuit, NVHL160N120SC1 data sheet : ONSEMI, ...