ON***I : NTC040N120SC1 - Silicon Carbide (SiC) MOSFET
NTC040N120SC1. Description. Silicon Carbide (SiC) MOSFET uses a new technology that provide superior switching performance and higher reliability.
On***i : Silicon Carbide (SiC) MOSFETs | NTC040N120SC1
Silicon Carbide (SiC) MOSFET uses a new technologythat provide superior switching performance and higher reliabilit to Silicon.
Mo***r Electronics : NTC040N120SC1 onsemi
NTC040N120SC1 · Mfr. #:. NTC040N120SC1 · Mfr.: onsemi · Description: MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die Silicon Carbide (SiC) ...
Mo***r Electronics : NTC040N120SC1 - Silicon Carbide (SiC) MOSFET
NTC040N120SC1. Description. Silicon Carbide (SiC) MOSFET uses a new technology that provide superior switching performance and higher reliability.
Di***Key : NTC040N120SC1 - Discrete Semiconductor Products
Order today, ships today. NTC040N120SC1 – N-Channel 1200 V 60A (Tc) 348W (Tc) Surface Mount Die from onsemi. Pricing and Availability on millions of ...
Da***heetsPDF : NTC040N120SC1 MOSFET Datasheet pdf - N-Channel ...
MOSFET – N‐Channel, Silicon Carbide 1200 V, 40 mW NTC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a new technology that provide superior ...
Da***heetsPDF : NTC040N120SC1 Datasheet | ON Semiconductor
MOSFET – N‐Channel, Silicon Carbide 1200 V, 40 mW NTC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a co mpletely new technology that provide su ...
Di***evices : Bare Die Product Detail: NTC040N120SC1
Bare Die Product Detail: NTC040N120SC1. 1200V: 1200 Volt 39mΩ Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with ...
Di***verEE : NTC040N120SC1 is a Silicon Carbide (SiC) FET rated at ...
NTC040N120SC1 is a Silicon Carbide (SiC) FET rated at 1200V, 60A, 0.056Ω Rdson(max) in BARE DIE 4.270 x 560 Datasheet. Device Parameter, Value feedback* ...