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NTBG160N120SC1. Features. • Typ. RDS(on)= 160 mΩ. • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC). • Low Effective Output Capacitance (typ. Coss = 50.7 pF).
On***i : Silicon Carbide (SiC) MOSFETs | NTBG160N120SC1
Silicon Carbide (SiC) MOSFET uses a new technology that provide superior switching performance and higher reliability to Silicon.
Mo***r Electronics : NTBG160N120SC1 onsemi
NTBG160N120SC1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, ...
Di***ey : NTBG160N120SC1 onsemi - Digikey
Order today, ships today. NTBG160N120SC1 – N-Channel 1200 V 19.5A (Tc) 136W (Tc) Surface Mount D2PAK-7 from onsemi. Pricing and Availability on millions of ...
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rs***ivers : N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7 ...
N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK onsemi NTBG160N120SC1. RS Stock No. 205-2494. Brand onsemi. Manufacturers Part No.
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Al***ransistors. Datasheet : NTBG160N120SC1 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: NTBG160N120SC1. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 136 W.
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N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK onsemi NTBG160N120SC1 ; Mfr. Part No.: NTBG160N120SC1 ; Manufacturer: onsemi ; Channel Type, N.
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SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage ...