On***i : IGBTs | HGTG5N120BND
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate ...
Mo***r Electronics : HGTG5N120BND onsemi / Fairchild
HGTG5N120BND onsemi / Fairchild IGBT Transistors 21a 1200V IGBT NPT Series N-Ch datasheet, inventory, & pricing.
Mo***r Electronics : HGTG5N120BND, HGTP5N120BND
The HGTG5N120BND and HGTP5N120BND are Non-. Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family.
Di***Key : HGTG5N120BND onsemi | Discrete Semiconductor Products
Order today, ships today. HGTG5N120BND – IGBT NPT 1200 V 21 A 167 W Through Hole TO-247-3 from onsemi. Pricing and Availability on millions of electronic ...
AL***TASHEET : HGTG5N120BND Datasheet(PDF) - Fairchild Semiconductor
The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family.
TM*** : HGTG5N120BND ONSEMI - Transistor: IGBT | 1.2kV; 10A
Specification ; Power dissipation. 167W ; Case. TO247-3 ; Gate-emitter voltage. ±20V ; Pulsed collector current. 40A ; Mounting. THT.
Ne***k Electronics : HGTG5N120BND - Onsemi - IGBT, 21 A, 2.45 V
Buy HGTG5N120BND - Onsemi - IGBT, 21 A, 2.45 V, 167 W, 1.2 kV, TO-247, 3 Pins. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, ...
LC*** : HGTG5N120BND onsemi | C442448 - LCSC Electronics
1816 products — HGTG5N120BND onsemi US$2.4294 - 167W 21A 1200V NPT TO-247-3 IGBTs ROHS datasheet, price, inventory C442448.
Da***heetsPDF : HGTG5N120BND Datasheet | Fairchild Semiconductor
HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are ...
Ut*** : HGTG5N120BND vs NGTB15N120IHWG
HGTG5N120BND alternative parts: NGTB15N120IHWG ; Collector Emitter Voltage (VCEO), 1.2kV, 2.45V ; Max Collector Current, 21A, 30A ; Reverse Recovery Time, 65 ns, -.