Di***ey : SPP80N06S2-07 - Discrete Semiconductor Products
Order today, ships today. SPP80N06S2-07 – N-Channel 55 V 80A (Tc) 250W (Tc) Through Hole PG-TO220-3-1 from Infineon Technologies.
Da***heet catalog : SPP80N06S2-07 SPB80N06S2-07
May 16, 2001 — 1Current limited by bondwire; with a RthJC = 0.6 K/W the chip is able to carry ID = 135A and calculated with max. source pin temperature of ...
Mo***r Electronics India : SPP80N06S2-07 Infineon Technologies - MOSFET
Specifications ; Vds - Drain-Source Breakdown Voltage: 55 V ; Id - Continuous Drain Current: 80 A ; Rds On - Drain-Source Resistance: 6.6 mOhms ; Vgs - Gate-Source ...
Ro***ster Electronics : Part SPP80N06S2-07
Dec 31, 2008 — Part Number, SPP80N06S2-07. Description, SPP80N06 - OPTIMOS, 80A, 55V, 0.0066ohm, N-Channel, Power MOSFET. RoHS, NO. Lifecycle Status, OBS.
Mo***r Electronics : SPP80N06S207 Infineon Technologies
Specifications ; Technology: Si ; Mounting Style: Through Hole ; Package / Case: TO-220-3 ; Transistor Polarity: N-Channel.
Da***heetsPDF : SPP80N06S2-07 Power-Transistor Datasheet pdf
SPP80N06S2-07 Datasheet, Equivalent, Power-Transistor. ; Power-Transistor.
Da***heetsPDF : SPP80N06S2-07 Datasheet | Infineon Technologies
SPP80N06S2-07 Power-Transistor datasheet pdf provided by Datasheetspdf pdf Search for SPP80N06S2-07.
AL***TASHEET : SPP80N06S2-07 Datasheet(PDF) - Infineon Technologies ...
SPP80N06S2-07 Datasheet (PDF) ; Page, 8 Pages ; Manufacturer, INFINEON [Infineon Technologies AG] ; Direct Link, infineon
da***heet : (PDF) SPP80N06S2-07 Datasheet - Power-Transistor
SPP80N06S2-07 Hoja de datos, SPP80N06S2-07 datasheet, Infineon Technologies - Power-Transistor, Hoja Técnica, SPP80N06S2-07 pdf, dataark, wiki, arduino, ...
zs*** : Rochester Electronics SPP80N06S2-07 - Discrete Semiconductor ...
This SPP80N06S2-07 Transistors - FETs, MOSFETs - Single is manufactured by Rochester Electronics, a trusted name in the industry known for their to ...