In***eon Technologies : Datasheet SPD08N50C3
SPD08N50C3. Cool MOS™ Power Transistor. VDS @ Tjmax. 2020-05-15. 560. V. RDS(on). 6 Ω. ID. 6 A. Feature. • New revolutionary high voltage technology.
In***eon Technologies : SPD08N50C3
SPD08N50C3 · Low specific on-state resistance (RDS(on)*A) · Very low energy storage in output capacitance (Eoss) @400V · Low gate charge (Qg) · Fieldproven CoolMOS™ ...
Mo***r Electronics : SPD08N50C3 Infineon Technologies
GaN enhancement-mode transistors with fast turn-on/turn-off speeds at minimum switching losses. ... Offers a cost-optimized and distinctively low on-resistance R ...
Di***ey : SPD08N50C3 - Discrete Semiconductor Products
SPD08N50C3 ; Product Status. Active ; Technology. MOSFET (Metal Oxide) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 600mOhm @ 4.6A, 10V.
Al***ransistors. Datasheet : SPD08N50C3 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: SPD08N50C3. Marking Code: 08N50C3. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation ...
LC*** : Infineon Technologies SPD08N50C3 - C539299
33707 products — SPD08N50C3 Infineon Technologies US$2.8223 - TO-252-3 MOSFETs ROHS datasheet, price, inventory C539299.
AL***TASHEET : SPD08N50C3 Datasheet(PDF) - Infineon Technologies AG
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge • Periodic avalanche rated
AL***TASHEET : SPD08N50C3 Datasheet(PDF) - Infineon Technologies AG
Part No. SPD08N50C3. Download, SPD08N50C3 Click to view. File Size, 620.29 Kbytes. Page, 11 Pages. Manufacturer, INFINEON [Infineon Technologies AG].
Da***heetsPDF : SPD08N50C3 Datasheet, Equivalent, Power Transistor.
SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax ...
Da***heetsPDF : SPD08N50C3 Datasheet, Equivalent, N-Channel MOSFET.
isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested · ...