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IRG7PH42UD1-EP Infineon Technologies IGBT Transistors IGBT DISCRETES datasheet, inventory, & pricing.
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AL***TASHEET : IRG7PH42UD1-EP Datasheet(PDF) - International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS, IRG7PH42UD1-EP Datasheet, IRG7PH42UD1-EP ...
Da***heetsPDF : IRG7PH42UD1-EP TRANSISTOR Datasheet pdf
International Rectifier IRG7PH42UD1-EP | TRANSISTOR. PD - 97480 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT.
Al***bout Circuits : IRG7PH42UD1-EP Infineon - Datasheet PDF & Technical ...
Infineon IRG7PH42UD1-EP technical specifications, attributes, and parameters. Trans IGBT Chip N-CH 1200V 85A 313000mW 3-Pin(3+Tab) TO-247AD Tube. Insulated Gate ...
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Mar 26, 2010 — IRG7PH42UD1-EP. GCE. C. GCE. C. PD - 97480. Absolute Maximum Ratings. Parameter. Max. Units. VCES. Collector-to-Emitter Voltage.
Di***ip : IRG7PH42UD1-EP datasheet - Specifications: Polarity: N-Channel
s: Diode Type: VARIABLE CAPACITANCE DIODE. STB50NE08T4 : 50 A, 80 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB. s: Polarity: N-Channel ; MOSFET ...
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The IRG7PH42UD1-EP parts are TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, T, manufactured by INFINEON are available for purchase at Jotrin Electronics.
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