Di***ey : IRF7413ZPBF Infineon Technologies
IRF7413ZPBF – N-Channel 30 V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO from Infineon Technologies. Pricing and Availability on millions of electronic ...
In***eon Technologies : IRF7413ZPbF
May 8, 2008 — Absolute Maximum Ratings. Parameter. Units. VDS. Drain-to-Source Voltage. V. VGS. Gate-to-Source Voltage. ID @ TA = 25°C.
Mo***r Electronics : IRF7413ZPBF Infineon Technologies - MOSFET
IRF7413ZPBF Infineon Technologies MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC datasheet, inventory, & pricing.
Tr***fer Multisort Elektronik : IRF7413ZPBF Infineon (IRF) - Transistor: N-MOSFET
Specification ; Power dissipation. 2.5W ; Case. SO8 ; Gate-source voltage. ±20V ; On-state resistance. 10mΩ ; Mounting. SMD.
Al***ransistors. Datasheet : IRF7413ZPBF MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IRF7413ZPBF. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 2.5 W.
AL***TASHEET : IRF7413ZPBF Datasheet(PDF) - International Rectifier
Benefits ○ Ultra-Low Gate Impedance ○ Very Low RDS(on) ○ Fully Characterized Avalanche Voltage and Current ○ 100% Tested for RG ○ Lead-Free.
WI***OURCE : IRF7413ZPBF Infineon Technologies - WIN SOURCE
The Infineon Technologies 134754-IRF7413ZPBF is an N-channel MOSFET transistor that in an 8-SO package. It has a drain-source breakdown voltage of 30V ...
Da***heetsPDF : IRF7413ZPBF Datasheet | International Rectifier
PD - 95335B IRF7413ZPbF HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics ...
RS***line : IRF7413ZPbF
IRF7413ZPbF. HEXFET® Power MOSFET. Notes Б through Д are on page 10. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche ...