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irf510
Ja***o Electronics : IRF510, IRF511, IRF512, IRF513
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power. MOSFETs designed, tested, and guaranteed to ...
Ne***ersey Semiconductor : IRF510 IRF511 IRF512 IRF513
IRF512, IRF513. Forward Transconductance. Input Capacitance..comon Source ... IRF513 Reverse Recovery Time. Mln. 100. 60. 0 0 5 0 Typ. 5
Di***ey : IRF512 - Discrete Semiconductor Products
IRF512 ; Input Capacitance (Ciss) (Max) @ Vds. 135 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 43W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
Al***ransistors. Datasheet : IRF512 MOSFET. Datasheet pdf. Equivalent
Equivalent. Type Designator: IRF512. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 20 W.
Da***heetsPDF : IRF512 Datasheet, Equivalent, Power MOSFET.
Part, IRF512. Description, N-Channel Power MOSFET. Feature . Manufacture, Fairchild Semiconductor. Datasheet. Download IRF512 Datasheet. Part, IRF512.
Pe***e also ask : What are power MOSFETs used for?
RF DMOS, also known as RF power MOSFET, is a type of DMOS power transistor designed for radio-frequency (RF) applications. It is used in various radio and RF applications. Power MOSFETs are widely used in transportation technology, which include a wide range of vehicles.
Pe***e also ask : What is the voltage of the IRF510 gate?
IRF510 Description The IRF510 is a high-speed N-Channel power MOSFET with an output load capability of up to 5.6A and load voltage up to 100V.
Pe***e also ask : What is IRF510?
IRF510 is a third-generation Power MOSFET with the best of fast switching and low on-state resistance. This is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.
Pe***e also ask : What is the power dissipation of IRF510?
Third generation Power MOSFETs provide the designer with the best of fast switching, ruggedized device design, low on-resistance and good cost-effectiveness. The TO-220AB package has power dissipation levels to approximately 50 W.
Am***n : Uxcell High Speed Switching N-Channel Power Mosfet ...
Product name : misfit; model No. : Irf512; channel Type : n-channel · Pin quantity : 3; power : 43W; drain source Voltage : 100V · Drain current : 4. 9A; package ...
Am***n : IIVVERR High Speed Switching N-Channel Power Mosfet ...
Product Name : MOSFET;Model No. : IRF512;Channel Type : N-Channel; Pin Quantity : 3;Power : 43W;Drain Source Voltage : 100V; Drain Current : 4.9A;Package ...
Di***ip : IRF512 - N-channel Power MOSFETs, 5.5 a, 60-100v
Details, datasheet, quote on part number: IRF512 ; Description, N-channel Power MOSFETs, 5.5 a, 60-100v ;.comany, Fairchild Semiconductor ; Datasheet, Download ...
AL***TASHEET : IRF512 Datasheet, PDF
IRF512 Datasheet N-Channel Enhancement-Mode Vertical DMOS Power FETs - Supertex, Inc N-Channel Power MOSFETs, 5.5 A, 60-100V, Fairchild Semiconductor.