Mo***r Electronics : IPB80N06S2LH5ATMA4 Infineon Technologies
Specifications ; Subcategory: MOSFETs ; Transistor Type: 1 N-Channel ; Width: 9.25 mm ; Part # Aliases: IPB80N06S2L-H5 SP001058126.
Ro***ster Electronics : Rochester Electronics (en-US) : Part IPB80N06S2LH5ATMA4
Part Number, IPB80N06S2LH5ATMA4. Description, IPB80N06 - 55V-60V N-Channel Automotive MOSFET. RoHS, YES. Lifecycle Status, OBS. Part Type, MOSFETs/FETs.
Di***Key : IPB80N06S2LH5ATMA4 Infineon Technologies
Order today, ships today. IPB80N06S2LH5ATMA4 – N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2 from Infineon Technologies.
Oc***art : IPB80N06S2LH5ATMA4 Infineon - MOSFETs - Distributors, Price ...
Descriptions of Infineon IPB80N06S2LH5ATMA4 provided by its distributors. 55V, N-Ch, 4.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS. Infineon ...
Di***art : IPB80N06S2LH5ATMA4 Price & Stock
IPB80N06S2LH5ATMA4, International Rectifier (Infineon Technologies), MOSFET N-CH 55V 80A TO263-3 ; PG-TO263-3-2. Transistors - FETs, MOSFETs - Single.
El***ronic Search Engine : IPB80N06S2LH5ATMA4 footprint, schematic symbol and 3D ...
IPB80N06S2LH5ATMA4 - Infineon. Description: MOSFET MOSFET_)40V 60V). Download ECAD Model. Schematic symbols. Schematic symbol is unavailable for download.
In***eon Technologies : OptiMOS® Power-Transistor
Dec 27, 2005 — 3 Safe operating area. 4 Max. transient thermal impedance. I D = f(V DS); T C = 25 °C; D = 0. Z thJC = f(t p) parameter: t p.
co***ents : IPB80N06S2LH5ATMA4 - РАДИОМАГ РКС КОМПОНЕНТЫ
IPB80N06S2LH5ATMA4 Infineon Technologies ; Operating Temperature: -55°C ~ 175°C (TJ) ; Technology: MOSFET (Metal Oxide) ; FET Type: N-Channel ; Current - Continuous ...
Ar*** Electronics : IPB80N06S2LH5ATMA4 de Infineon Technologies AG | MOSFETs
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