Mo***r Electronics : IKW03N120H2 Infineon Technologies
IKW03N120H2 Infineon Technologies IGBT Transistors HIGH SPEED 2 TECH 1200V 3A datasheet, inventory, & pricing.
Mo***r Electronics : IKW03N120H2 Infineon Technologies | Mouser Croatia
Specifications ; Collector- Emitter Voltage VCEO Max: 1.2 kV ; Maximum Gate Emitter Voltage: - 20 V, + 20 V ; Minimum Operating Temperature: - 40 C ; Maximum ...
Di***ey : IKW03N120H2 - Discrete Semiconductor Products
Order today, ships today. IKW03N120H2 – IGBT 1200 V 9.6 A 62.5 W Through Hole PG-TO247-3-1 from Infineon Technologies. Pricing and Availability on millions ...
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IKW03N120H2. Power Semiconductors. 1. Rev. 2.3 Apr 06. HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode. •. Designed for:.
Da***heetsPDF : IKW03N120H2 Datasheet | Infineon Technologies
IKP03N120H2, IKW03N120H2 www. DataSheet4U..comIKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - SMPS - ...
In***eon Technologies : Solved: Datasheet for IKW03N120H2 - Infineon Developer
I'm doing some power cycling tests on this device but cannot calculate the value of maximum junction temperature since I couldn't find the junction-to-case ...
AL***TASHEET : IKW03N120H2 Datasheet(PDF) - Infineon Technologies AG
Designed for: - SMPS - Lamp Ballast - ZVS-Converter • 2nd generation HighSpeed-Technology for 1200V applications offers:
vo*** : IKP03N120H2 IKW03N120H2
IKW03N120H2. Power Semiconductors. 1. Rev. 2.6 2013 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled. HE diode.
am***-solutions : IKW03N120H2-Product center-Ample Solutions
IKW03N120H2 · IGBT+ DIODE,1200V,3A,TO247; Transistor Type:IGBT; DC Collector Current:3A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:62.5W; ...