Di***ey : HGT1S3N60C3D Harris Corporation - DigiKey Marketplace
Order today, ships today. HGT1S3N60C3D – IGBT 600 V 6 A 33 W Through Hole I2PAK (TO-262) from Harris Corporation. Pricing and Availability on millions of ...
dz*** : HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices the best features of MOSFETs and bipolar transistors ...
Da***heetsPDF : HGT1S3N60C3D Datasheet, Equivalent, N-Channel IGBT.
130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS ...
Di***ip : HGT1S3N60C3D datasheet - 6a, 600v, Ufs Series N-channel ...
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop ...
Al***ransistors. Datasheet : HGT1S3N60C3D IGBT. Datasheet pdf - Equivalent
Equivalent. Type Designator: HGT1S3N60C3D. Type: IGBT + Anti-Parallel Diode. Marking Code: G3N60C3D. Type of IGBT Channel: N. Maximum Power ...
zs*** : Rochester Electronics HGT1S3N60C3D - Discrete Semiconductor ...
This HGT1S3N60C3D Transistors - IGBTs - Single is manufactured by Rochester Electronics, a trusted name in the industry known for their to quality ...
ch***ind : HGT1S3N60C3D (Harris) - 6a, 600v, Ufs Series N-channel IGBT ...
Description, 6a, 600v, Ufs Series N-channel IGBT With Anti-parallel Hyperfast Diodes ; Functional, IGBTs (Insulated Gate Bipolar Transistors) ; Manufacturer ...
av***res : AVspares Part number HGT1S3N60C3D
Mar 6, 2023 — It looks like your searching for part HGT1S3N60C3D. We have 18 listings matching HGT1S3N60C3D in 2 countries. More information about part ...
AL***TASHEET : HGT1S3N60C3D Manufacturer, Function, Datasheet
Part No. Datasheet Date Size, Description, Rohs Pb Free Lifecycle, Direct Link. Intersil Corporation, HGT1S3N60C3DS · Datasheet PDF Image, 6A, 600V ...