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Mo***r Electronics : FJA3835TU onsemi / Fairchild
2 days ago — Specifications ; Emitter- Base Voltage VEBO: 8 V ; Maximum DC Collector Current: 8 A ; Pd - Power Dissipation: 80 W ; Gain Bandwidth Product fT: 4 ...
Al***bout Circuits : FJA3835TU onsemi - Datasheet PDF & Technical Specs
Download the FJA3835TU datasheet from onsemi. Tube Through Hole NPN Bipolar (BJT) Transistor 120 @ 3A 4V 8A 80W 30MHz.
ap***cation-datasheet : FJA3835TU FJA3835 Datasheet & Application Note
PDF Datasheet Preview. FJA3835 NPN Epitaxial Silicon Transistor FJA3835 NPN Epitaxial Silicon Transistor • Power Amplifier • High Current Capability IC=8A
ap***cation-datasheet : FJA3835 FJA3835TU ON Semiconductor Datasheet
Symbol. Parameter. Test Condition. Min. Typ. Max. Units. BVCBO. Collector-Base Breakdown Voltage. IC=5mA, IE=0. 200. V. BVCEO.
zs*** : Rochester Electronics FJA3835TU - Discrete Semiconductor ...
This FJA3835TU Transistors - Bipolar (BJT) - Single is manufactured by Rochester Electronics, a trusted name in the industry known for their to ...
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Original Integrated Circuits Relay FJA3835TU IN STOCK. Product Details: 1. New FJA3835TU 2. Fast Shipping 3. Good warranty. Payment
Al***ba : New And Original Ic Chip Bom List Fja3835tu In Stock
new and original IC chip BOM list FJA3835TU in stock ; Current - Output High, Low: standard ; Current - Peak Output: standard ; Voltage - Forward (Vf) (Typ):.
Ar*** Electronics : onsemi FJA3835TU GP BJT
Totem pole power factor correction technology improves power conversion efficiency and power density. At present, most electrical appliances on the market ...