Di***ey : BSP322PL6327HTSA1 Infineon Technologies
Order today, ships today. BSP322PL6327HTSA1 – P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4-21 from Infineon Technologies.
Oc***art : BSP322PL6327HTSA1 Infineon | Distributors, Price ...
Infineon BSP322PL6327HTSA1 ; Min Operating Temperature, -55 °C ; Number of Elements, 1 ; Packaging, Tape & Reel ; Power Dissipation, 1.8 W ; Rds On Max, 800 mΩ.
In***eon Technologies : BSP322P
Nov 28, 2012 — 3 Safe operating area. 4 Max. transient thermal impedance. I D=f(V DS); T C=25 °C; D =0. Z thJC=f(t p) parameter: t p parameter: D =t p/T.
Mo***r Electronics : BSP322P L6327 Infineon Technologies
Transistor Type: 1 P-Channel. Typical Turn-Off Delay Time: 21.2 ns. Typical Turn-On Delay Time: 4.6 ns. Width: 3.5 mm. Part # Aliases: BSP322PL6327HTSA1.
Al***bout Circuits : BSP322PL6327HTSA1 Infineon - Datasheet PDF & ...
Download the BSP322PL6327HTSA1 datasheet from Infineon. Trans MOSFET P-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R.
ap***cation-datasheet : BSP322PL6327HTSA1 BSP322P Datasheet
PDF Datasheet Preview. Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating RoHS
Ma***in-China : Single Mosfet P-CH 100V 1A Sot223-4 Bsp322pl6327htsa1
Discrete Semiconductor Productstransistors - Fets, Mosfets - Single Mosfet P-CH 100V 1A Sot223-4 Bsp322pl6327htsa1 ; Model NO. BSP322PL6327HTSA1 ; HS Code.
pr***ct-discontinuation : PRODUCT DISCONTINUATION
Nov 15, 2012 — BSP322PL6327HTSA1. BSP322P H6327. PG-SOT223. SP001058784. BSP324 L6327. PG-SOT223. SP000089203. BSP324L6327HTSA1. BSP324 H6327. PG-SOT223.
Ut*** : Infineon Technologies BSP88L6327HTSA1
Technology. MOSFET (Metal Oxide) ; Number of Elements. 1 ; Power Dissipation-Max. 1.7W Ta ; FET Type. N-Channel ; Rds On (Max) @ Id, Vgs. 6Ohm @ 350mA, 10V.
Ka***ite : BSP300 E6327 MOSFET N-CH 800V 190MA SOT-223
Part Status : Power Dissipation (Max) : 1.8W (Ta). Rds On (Max) @ Id, Vgs : 20 Ohm @ 190mA, 10V.