Am***on : BLD6G22L-50; BLD6G22LS-50
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using. Ampleon's state of the art GEN6 LDMOS technology. This device is perfectly ...
Am***on : BLD6G22LS-50
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon's state of the art GEN6 LDMOS technology.
Di***ey : BLD6G22L-50112 Ampleon USA Inc.
Order today, ships today. BLD6G22L-50112 – RF Mosfet 28 V 170 mA 2.14GHz 14dB 8W CDFM4 from Ampleon USA Inc.. Pricing and Availability on millions of ...
RF*** : BLD6G22L-50112 at RFMW, Ltd
RF Power Transistor, 2.11 to 2.17 GHz, 50 W, 14 dB, 28 V, LDMOS, SOT-1130A. More Info. ×. More Details for BLD6G22L-50,112. Pricing. Submit Quote Request.
Da***heet : BLD6G22LS-50112 - W-CDMA 2110 MHz to 2170 ...
Part No. BLD6G22LS-50112 BLD6G22L-50112 ; Description, W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor ; File Size, 155.65K / 15 Page ; Maker
av***res : AVspares Part number BLD6G21LS50112
4 days ago — It looks like your searching for part BLD6G21LS50112. We have 18 listings matching BLD6G21LS50112 in 5 countries ...
AL***TASHEET : BLD122 Datasheet, PDF
Manufacturer, Part No. Datasheet Date Size, Description, Rohs Pb Free Lifecycle ; NXP Semiconductors, BLD6G21L-50, 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, ...
AL***TASHEET : BLD138 Datasheet, PDF
Manufacturer, Part No. Datasheet Date Size, Description, Rohs Pb Free Lifecycle ; NXP Semiconductors, BLD6G21L-50, 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, ...
Di***ip : BC618,112 datasheet - Specifications: Transistor Type: NPN
BLD6G22L-50,112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 10.2A ; Noise Figure: - ; Frequency: 2.11GHz ~ 2.17GHz ...