NX***emiconductors : A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data ...
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous.
NX***emiconductors : A3T18H455W23S Product Information
A3T18H455W23SR6. 12NC: 935354975128. Active. Packing: REEL-Reel 13" Q2/T3; Min. Package Quantity: 150; Min. Order Quantity: 150; Lead Time: 12.
Mo***r Electronics : A3T18H455W23SR6 NXP Semiconductors
A3T18H455W23SR6 NXP Semiconductors RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V datasheet, inventory, & pricing.
Di***ey : A3T18H455W23SR6 NXP USA Inc.
A3T18H455W23SR6 – RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S from NXP USA Inc.. Pricing and Availability on millions of electronic ...
Di***Key : A3T18H455W23SR6 NXP USA Inc.
A3T18H455W23SR6 – RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S from NXP USA Inc.. Pricing and Availability on millions of electronic ...
Ar*** Electronics : A3T18H455W23SR6 by NXP Semiconductors | RF FETs
NXP SemiconductorsA3T18H455W23SR6RF FETs ; Automotive, No ; PPAP, No ; Process Technology, LDMOS ; Maximum Frequency (MHz), 1880 ; Minimum Frequency (MHz), 1805.
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Original New In Stock RF MOSFET Transistor A3T18H455W23SR6, You can get more details about from mobile site on alibaba
ic***rect : A3T18H455W23SR6 | NXP | Request now from stock - IC-Direct
A3T18H455W23SR6. Manufacturer: NXP. Part Number: A3T18H455W23SR6. Description: Discrete Semiconductor Products Transistors - FETs, MOSFETs - RF ...
al***tasheet : A3T18H455W23SR6 Datasheet(PDF) - NXP Semiconductors
N-Channel Enhancement-Mode Lateral MOSFET, A3T18H455W23SR6 Datasheet, A3T18H455W23SR6 circuito, A3T18H455W23SR6 data sheet : NXP, alldatasheet, Datasheet, ...