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PNP Middle Power Transistor (-30V / -1) - 2SAR293PHZG (New) NPN 1.5A 80V Medium Power Transistor for Automotive - 2SCR554PHZG (New) High-Power....
Mo***r Electronics : 2N6274 Microchip Technology | Mouser
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Mo***r Electronics : 2N6274 Datasheet - Microchip Technology
2N6274 Microchip Technology Bipolar Transistors - BJT Power BJT datasheet, inventory, & pricing.
Mi***semi : TECHNICAL DATA
2N6274. 2N6277. JAN. JANTX. JANTXV. MAXIMUM RATINGS. Ratings. Symbol 2N6274 2N6277 Unit. Collector-Emitter Voltage. VCEO. 100. 150. Vdc. Collector-Base Voltage.
Mi***semi : 2N6274
2N6274 (#53649) ; 50 ; A. Collector-Emitter Voltage (Base Open), V · 100, V ; Junction Temperature (°C), T ; 200 ; °C · Alphanumeric Parameter, Value ...
Di***ey : 2N6274 Microchip Technology | Transistors
2N6274 Microchip Technology. Share. 2N6274. Microchip Technology. Discrete Semiconductor Products | Single Bipolar Transistors. Mfr Part #. Description. Stock.
Da***heetsPDF : 2N6274 Datasheet, Equivalent, SIlicon Transistor.
designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — ...
Da***heetsPDF : 2N6274 Datasheet, Equivalent, Power Transistor.
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6274 DESCRIPTION ·High Switching Speed ·High DC Current Gain- : hFE= 30-120@ ...
Al***ransistors. Datasheet : 2N6274 Datasheet, Equivalent, Cross Reference Search
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6277 DESCRIPTION High Switching Speed High DC Current Gain- : hFE= 30-120@ ...
AL***TASHEET : 2N6274 Datasheet(PDF) - ON Semiconductor
designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — ...
eB*** : (1 PC) MOTOROLA 2N6274 Power Bipolar Transistor 50A ...
(1 PC) MOTOROLA 2N6274 Power Bipolar Transistor 50A I(C) NPN ; Quantity. 1 available ; Item Number. 264577487781 ; Country/Region of Manufacture. United States.
VP*** : 2N6274, 2N6277
Parameter. Test Conditions. Symbol Units. Min. Max. Collector - Emitter Breakdown Voltage. IC = 50 mA dc, 2N6274. IC = 50 mA dc, 2N6277.