Di***ey : IS66WVE2M16ECLL-70BLI - Integrated Circuits (ICs)
IS66WVE2M16ECLL-70BLI ; Memory Type. Volatile ; Technology. PSRAM (Pseudo SRAM) ; Memory Organization. 2M x 16 ; Memory Interface. Parallel ; Write Cycle Time - Word ...
Mo***r Electronics : IS66WVE2M16ECLL-70BLI ISSI
IS66WVE2M16ECLL-70BLI ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns datasheet, inventory, & pricing.
Mo***r Electronics : IS66WVE2M16ECLL-70BLI-TR ISSI
IS66WVE2M16ECLL-70BLI-TR ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,55ns,VDD 7V-1, VDDQ 7V-3,48 Ball BGA (6x8 mm), RoHS datasheet, ...
Av*** : IS66WVE2M16ECLL-70BLI by ISSI PSRAM
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Av*** : IS66WVE2M16ECLL-70BLI-TR by ISSI PSRAM
The IS66WVE2M16EALL are integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words ...
Oc***art : IS66WVE2M16ECLL-70BLI ISSI - Memory - Distributors, Price ...
Descriptions of ISSI IS66WVE2M16ECLL-70BLI provided by its distributors. Cellular RAM Pseudo SRAM, 2Mx16, 1.7 to 1.95V, 70ns, TFBGA-48. ISSI SCT.
TM*** : IS66WVE2M16ECLL-70BLI
IS66WVE2M16ECLL-70BLIISSI ; Type of integrated circuit. SRAM memory ; Kind of memory. PSRAM ; Memory organisation. 2Mx16bit ; Access time. 70ns ; Case. TFBGA48.
IS*** : 32Mb Async/Page PSRAM
IS66WVE2M16EBLL-70BLI. 48-ball TFBGA, Lead-free. • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~6V Industrial Temperature Range: (-40oC to +85oC).
RI***O Electronics Ltd. : IS66WVE2M16ECLL-70BLI-TR
Buy IS66WVE2M16ECLL-70BLI-TR SRAM 7-1/ 7-3 32M 2Mx16 by ISSI from Ri-Yao Electronics. Get quote, technical information and datasheet.