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Tanssion > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single > NSS30100LT1G

NSS30100LT1G Sanyo Semiconductor/ON Semiconductor

NSS30100LT1G
  • Part Number: NSS30100LT1G
  • Manufacturer: Sanyo Semiconductor/ON Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: NSS30100LT1G More Information
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Stock : 7325 Can Ship Immediately

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Qty Unit Price
1+: $0.45

Sub Total: $0.45

Minimum: 1 Multiples: 1
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Current price of NSS30100LT1G is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • Registered Mail(www.singpost.com)

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NSS30100LT1G Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Sanyo Semiconductor/ON Semiconductor NSS30100LT1G technical specifications,attributes, parameters and parts with similar specifications to Sanyo Semiconductor/ON Semiconductor NSS30100LT1G.

  • Type
    Parameter
  • NSS30100LT1G
  • Manufacturer
    Sanyo Semiconductor/ON Semiconductor
  • Pricing(USD)
    $0.45
  • Remark
    Manufacturer: Sanyo Semiconductor/ON Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • hFE Min
    100
  • Frequency
    100 MHz
  • Schedule B
    8541210080
  • Current Rating
    -1 A
  • Contact Plating
    Tin
  • Number of Elements
    1
  • Transition Frequency
    100 MHz
  • Max Breakdown Voltage
    30 V
  • Max Power Dissipation
    310 mW
  • Max Operating Temperature
    150 °C
  • Emitter Base Voltage (VEBO)
    5 V
  • Collector Emitter Voltage (VCEO)
    30 V
  • Collector Emitter Saturation Voltage
    -650 mV
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
  • NSS30100LT1G.pdf
  • 7325 In Stock
  • Applications
  • Polarity
    PNP
  • Packaging
    Tape and Reel
  • Case/Package
    SOT-23-3
  • Number of Pins
    3
  • Power Dissipation
    710 mW
  • Voltage Rating (DC)
    -30 V
  • Element Configuration
    Single
  • Max Collector Current
    1 A
  • Gain Bandwidth Product
    100 MHz
  • Min Operating Temperature
    -55 °C
  • Collector Base Voltage (VCBO)
    50 V
  • Collector Emitter Breakdown Voltage
    30 V

Download datasheets and manufacturer documentation for Sanyo Semiconductor/ON Semiconductor NSS30100LT1G

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NSS30100LT1G Overview

NSS30100LT1G is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NSS30100LT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. NSS30100LT1G is widely used in Test & measurement,Wearables (non-medical),Industrial transport (non-car & non-light truck). It is manufactured by Sanyo Semiconductor/ON Semiconductor and distributed by Fans, Tanssion and other distributors. NSS30100LT1G can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of NSS30100LT1G is insufficient, we also have other models under the Discrete Semiconductor Transistors - Bipolar (BJT) - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order NSS30100LT1G from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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NSS30100LT1G Information

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  • Image

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    Package
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    Transistor Type
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    Frequency - Transition
    Supplier Device Package
    Vce Saturation (Max) @ Ib, Ic
    Current - Collector (Ic) (Max)
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    DC Current Gain (hFE) (Min) @ Ic, Vce
    Voltage - Collector Emitter Breakdown (Max)
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