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Tanssion > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > BCR583E6327HTSA1

BCR583E6327HTSA1 IR (Infineon Technologies)

BCR583E6327HTSA1
  • Part Number: BCR583E6327HTSA1
  • Manufacturer: IR (Infineon Technologies)
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: BCR583E6327HTSA1 More Information
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Stock : 3354 Can Ship Immediately

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Sub Total: $0.05

Minimum: 1 Multiples: 1
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Current price of BCR583E6327HTSA1 is for reference only,please send email to sales@tanssion.com to get the newest price.

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BCR583E6327HTSA1 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

IR (Infineon Technologies) BCR583E6327HTSA1 technical specifications,attributes, parameters and parts with similar specifications to IR (Infineon Technologies) BCR583E6327HTSA1.

  • Type
    Parameter
  • BCR583E6327HTSA1
  • Manufacturer
    IR (Infineon Technologies)
  • Pricing(USD)
    $0.05
  • Remark
    Manufacturer: IR (Infineon Technologies).
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Height
    900 µm
  • hFE Min
    70
  • Packaging
    Cut Tape (CT)
  • Case/Package
    SOT
  • Number of Pins
    3
  • Package Quantity
    3000
  • Voltage Rating (DC)
    -50 V
  • Element Configuration
    Single
  • Max Collector Current
    500 mA
  • Max Operating Temperature
    150 °C
  • Collector Base Voltage (VCBO)
    10 V
  • Collector Emitter Breakdown Voltage
    50 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - Bipolar (BJT) - Single, Pre-Biased
  • BCR583E6327HTSA1.pdf
  • 3354 In Stock
  • Applications
  • Width
    1.3 mm
  • Length
    2.9 mm
  • Polarity
    PNP
  • Schedule B
    8541210080
  • Current Rating
    -500 mA
  • Input Resistance
    10 kΩ
  • Power Dissipation
    330 mW
  • Transition Frequency
    150 MHz
  • Max Breakdown Voltage
    50 V
  • Max Power Dissipation
    330 mW
  • Min Operating Temperature
    -65 °C
  • Collector Emitter Voltage (VCEO)
    50 V
  • Collector Emitter Saturation Voltage
    300 mV

Download datasheets and manufacturer documentation for IR (Infineon Technologies) BCR583E6327HTSA1

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BCR583E6327HTSA1 Overview

BCR583E6327HTSA1 is a model belonging to the Transistors - Bipolar (BJT) - Single, Pre-Biased subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BCR583E6327HTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BCR583E6327HTSA1 is widely used in Motor drives,Medical,Electronic point of sale (EPOS). It is manufactured by IR (Infineon Technologies) and distributed by Fans, Tanssion and other distributors. BCR583E6327HTSA1 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of BCR583E6327HTSA1 is insufficient, we also have other models under the Discrete Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order BCR583E6327HTSA1 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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BCR583E6327HTSA1 Information

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  • Image

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    Transistor Type
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    Frequency - Transition
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    Current - Collector (Ic) (Max)
    Current - Collector Cutoff (Max)
    DC Current Gain (hFE) (Min) @ Ic, Vce
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