Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > SI4465ADY-T1-GE3

SI4465ADY-T1-GE3 Vishay / Siliconix

SI4465ADY-T1-GE3
  • Part Number: SI4465ADY-T1-GE3
  • Manufacturer: Vishay / Siliconix
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: SI4465ADY-T1-GE3 More Information
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Stock : 7142 Can Ship Immediately

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Qty Unit Price
1+: $1.97

Sub Total: $1.97

Minimum: 1 Multiples: 1
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Current price of SI4465ADY-T1-GE3 is for reference only,please send email to sales@tanssion.com to get the newest price.

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SI4465ADY-T1-GE3 Information

  • Specifications
  • Datasheet
  • Product Details
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Vishay / Siliconix SI4465ADY-T1-GE3 technical specifications,attributes, parameters and parts with similar specifications to Vishay / Siliconix SI4465ADY-T1-GE3.

  • Type
    Parameter
  • SI4465ADY-T1-GE3
  • Manufacturer
    Vishay / Siliconix
  • Pricing(USD)
    $1.97
  • Remark
    Manufacturer: Vishay / Siliconix.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Height
    1.5 mm
  • Weight
    186.993455 mg
  • Packaging
    Digi-Reel®
  • Rds On Max
    9 mΩ
  • Case/Package
    SOIC
  • Power Dissipation
    3 W
  • Number of Channels
    1
  • Turn-On Delay Time
    33 ns
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    9 mΩ
  • Continuous Drain Current (ID)
    20 A
  • Drain to Source Breakdown Voltage
    -8 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • SI4465ADY-T1-GE3.pdf
  • 7142 In Stock
  • Applications
  • Width
    4 mm
  • Length
    5 mm
  • Fall Time
    112 ns
  • Rise Time
    170 ns
  • Schedule B
    8541290080
  • Number of Pins
    8
  • Threshold Voltage
    -450 mV
  • Number of Elements
    1
  • Turn-Off Delay Time
    168 ns
  • Max Power Dissipation
    3 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    8 V
  • Drain to Source Voltage (Vdss)
    8 V

Download datasheets and manufacturer documentation for Vishay / Siliconix SI4465ADY-T1-GE3

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SI4465ADY-T1-GE3 Overview

SI4465ADY-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI4465ADY-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. SI4465ADY-T1-GE3 is widely used in Enterprise machine,Advanced driver assistance systems (ADAS),Broadband fixed line access. It is manufactured by Vishay / Siliconix and distributed by Fans, Tanssion and other distributors. SI4465ADY-T1-GE3 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of SI4465ADY-T1-GE3 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order SI4465ADY-T1-GE3 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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SI4465ADY-T1-GE3 Information

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The three parts on the right have similar specifications to Vishay / Siliconix SI4465ADY-T1-GE3.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
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  • SI4465ADY-T1-GE3 Picture
  • SI4465ADY-T1-GE3 Image
  • SI4465ADY-T1-GE3 Part
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