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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > SCT3060ALGC11

SCT3060ALGC11 ROHM Semiconductor

SCT3060ALGC11
  • Part Number: SCT3060ALGC11
  • Manufacturer: ROHM Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: SCT3060ALGC11 More Information
  • ECAD: Request Free CAD Models
Stock : 6075 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $12.38

Sub Total: $12.38

Minimum: 1 Multiples: 1
RFQ

Current price of SCT3060ALGC11 is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

    T/T
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    Paypal
  • Visa

    Visa
  • MoneyGram

    MoneyGram
  • Western Union

    Western Union

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

    From $40.00 basic shipping fee depend on zone

  • FedEx(www.fedex.com)

    From $40.00 basic shipping fee depend on zone

  • Registered Mail(www.singpost.com)

    From $40.00 basic shipping fee depend on zone

SCT3060ALGC11 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

ROHM Semiconductor SCT3060ALGC11 technical specifications,attributes, parameters and parts with similar specifications to ROHM Semiconductor SCT3060ALGC11.

  • Type
    Parameter
  • SCT3060ALGC11
  • Manufacturer
    ROHM Semiconductor
  • Pricing(USD)
    $12.38
  • Remark
    Manufacturer: ROHM Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Through Hole
  • Rds On Max
    78 mΩ
  • Input Capacitance
    852 pF
  • Threshold Voltage
    2.7 V
  • Turn-On Delay Time
    19 ns
  • Max Power Dissipation
    165 W
  • Min Operating Temperature
    -55 °C
  • Continuous Drain Current (ID)
    39 A
  • Drain to Source Voltage (Vdss)
    650 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • SCT3060ALGC11.pdf
  • 6075 In Stock
  • Applications
  • Height
    25.5 mm
  • Case/Package
    TO-247-3
  • Power Dissipation
    165 W
  • Number of Channels
    1
  • Turn-Off Delay Time
    34 ns
  • Max Operating Temperature
    175 °C
  • Drain to Source Resistance
    60 mΩ
  • Max Junction Temperature (Tj)
    175 °C
  • Drain to Source Breakdown Voltage
    650 V

SCT3060ALGC11 Overview

SCT3060ALGC11 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SCT3060ALGC11 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. SCT3060ALGC11 is widely used in Wearables (non-medical),Grid infrastructure,Industrial transport (non-car & non-light truck). It is manufactured by ROHM Semiconductor and distributed by Fans, Tanssion and other distributors. SCT3060ALGC11 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of SCT3060ALGC11 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order SCT3060ALGC11 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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SCT3060ALGC11 Information

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ROHM Semiconductor SCT3060ALGC11 technical specifications,attributes, parameters and parts with similar specifications to ROHM Semiconductor SCT3060ALGC11.

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The three parts on the right have similar specifications to ROHM Semiconductor SCT3060ALGC11.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
    4V, 5V
    1A (Ta)
    -
The three parts on the right have similar specifications to ROHM Semiconductor SCT3060ALGC11
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  • SCT3060ALGC11 Technical Data
  • SCT3060ALGC11 PDF
  • SCT3060ALGC11 Picture
  • SCT3060ALGC11 Image
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