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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > RQ3E120GNTB

RQ3E120GNTB ROHM Semiconductor

RQ3E120GNTB
  • Part Number: RQ3E120GNTB
  • Manufacturer: ROHM Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
  • Delivery: DHL、UPS、FedEx、Registered Mail
  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: RQ3E120GNTB More Information
  • ECAD: Request Free CAD Models
Stock : 8314 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $0.46

Sub Total: $0.46

Minimum: 1 Multiples: 1
RFQ

Current price of RQ3E120GNTB is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

    T/T
  • Paypal

    Paypal
  • Visa

    Visa
  • MoneyGram

    MoneyGram
  • Western Union

    Western Union

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

    From $40.00 basic shipping fee depend on zone

  • FedEx(www.fedex.com)

    From $40.00 basic shipping fee depend on zone

  • Registered Mail(www.singpost.com)

    From $40.00 basic shipping fee depend on zone

RQ3E120GNTB Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

ROHM Semiconductor RQ3E120GNTB technical specifications,attributes, parameters and parts with similar specifications to ROHM Semiconductor RQ3E120GNTB.

  • Type
    Parameter
  • RQ3E120GNTB
  • Manufacturer
    ROHM Semiconductor
  • Pricing(USD)
    $0.46
  • Remark
    Manufacturer: ROHM Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Packaging
    Cut Tape (CT)
  • Rds On Max
    8.8 mΩ
  • Input Capacitance
    590 pF
  • Turn-On Delay Time
    9.6 ns
  • Turn-Off Delay Time
    25.5 ns
  • Max Power Dissipation
    2 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Voltage (Vdss)
    30 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • RQ3E120GNTB.pdf
  • 8314 In Stock
  • Applications
  • Fall Time
    3.4 ns
  • Rise Time
    4.5 ns
  • Number of Pins
    8
  • Number of Channels
    1
  • Number of Terminals
    8
  • Element Configuration
    Single
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    8.8 mΩ
  • Continuous Drain Current (ID)
    12 A

RQ3E120GNTB Overview

RQ3E120GNTB is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have RQ3E120GNTB high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. RQ3E120GNTB is widely used in Broadband fixed line access,Enterprise machine,Enterprise projectors. It is manufactured by ROHM Semiconductor and distributed by Fans, Tanssion and other distributors. RQ3E120GNTB can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of RQ3E120GNTB is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order RQ3E120GNTB from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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RQ3E120GNTB Information

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The three parts on the right have similar specifications to ROHM Semiconductor RQ3E120GNTB.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
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    1.3W (Ta)
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The three parts on the right have similar specifications to ROHM Semiconductor RQ3E120GNTB
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