Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > ES6U2T2R

ES6U2T2R ROHM Semiconductor

ES6U2T2R
  • Part Number: ES6U2T2R
  • Manufacturer: ROHM Semiconductor
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: ES6U2T2R More Information
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Stock : 6640 Can Ship Immediately

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Qty Unit Price
1+: $0.09

Sub Total: $0.09

Minimum: 1 Multiples: 1
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Current price of ES6U2T2R is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

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ES6U2T2R Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

ROHM Semiconductor ES6U2T2R technical specifications,attributes, parameters and parts with similar specifications to ROHM Semiconductor ES6U2T2R.

  • Type
    Parameter
  • ES6U2T2R
  • Manufacturer
    ROHM Semiconductor
  • Pricing(USD)
    $0.09
  • Remark
    Manufacturer: ROHM Semiconductor.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
  • Rds On Max
    180 mΩ
  • Number of Channels
    1
  • Turn-Off Delay Time
    20 ns
  • Max Operating Temperature
    150 °C
  • Drain to Source Resistance
    130 mΩ
  • Continuous Drain Current (ID)
    1.5 A
  • Drain to Source Breakdown Voltage
    20 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • ES6U2T2R.pdf
  • 6640 In Stock
  • Applications
  • Fall Time
    3 ns
  • Rise Time
    5 ns
  • Input Capacitance
    110 pF
  • Turn-On Delay Time
    5 ns
  • Max Power Dissipation
    700 mW
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    10 V
  • Drain to Source Voltage (Vdss)
    20 V

Download datasheets and manufacturer documentation for ROHM Semiconductor ES6U2T2R

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ES6U2T2R Overview

ES6U2T2R is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have ES6U2T2R high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. ES6U2T2R is widely used in Broadband fixed line access,Advanced driver assistance systems (ADAS),Power delivery. It is manufactured by ROHM Semiconductor and distributed by Fans, Tanssion and other distributors. ES6U2T2R can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of ES6U2T2R is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order ES6U2T2R from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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ES6U2T2R Information

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500+: $0

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Hybrid, electric & powertrain systems
Motor drives
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100+: $0

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1000+: $0.192

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The three parts on the right have similar specifications to ROHM Semiconductor ES6U2T2R.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
    4V, 5V
    1A (Ta)
    -
The three parts on the right have similar specifications to ROHM Semiconductor ES6U2T2R
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  • ES6U2T2R Technical Data
  • ES6U2T2R PDF
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  • ES6U2T2R RFQ
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