Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > TPS1100DR

TPS1100DR Rochester Electronics

TPS1100DR
  • Part Number: TPS1100DR
  • Manufacturer: Rochester Electronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • Payment: T/T Paypal Visa MoneyGram Western Union
  • More Information: TPS1100DR More Information
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Stock : 6989 Can Ship Immediately

Unit Price: Call

Qty Unit Price
1+: $0.68

Sub Total: $0.68

Minimum: 1 Multiples: 1
RFQ

Current price of TPS1100DR is for reference only,please send email to sales@tanssion.com to get the newest price.

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  • T/T

    T/T
  • Paypal

    Paypal
  • Visa

    Visa
  • MoneyGram

    MoneyGram
  • Western Union

    Western Union

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  • DHL(www.dhl.com)

    From $40.00 basic shipping fee depend on zone

  • UPS(www.ups.com)

    From $40.00 basic shipping fee depend on zone

  • FedEx(www.fedex.com)

    From $40.00 basic shipping fee depend on zone

  • Registered Mail(www.singpost.com)

    From $40.00 basic shipping fee depend on zone

TPS1100DR Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Rochester Electronics TPS1100DR technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics TPS1100DR.

  • Type
    Parameter
  • TPS1100DR
  • Manufacturer
    Rochester Electronics
  • Pricing(USD)
    $0.68
  • Remark
    Manufacturer: Rochester Electronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Height
    1.75 mm
  • Fall Time
    10 ns
  • Rise Time
    10 ns
  • Rds On Max
    180 mΩ
  • Number of Pins
    8
  • Power Dissipation
    791 mW
  • Turn-Off Delay Time
    13 ns
  • Max Operating Temperature
    125 °C
  • Drain to Source Resistance
    400 mΩ
  • Continuous Drain Current (ID)
    1.6 A
  • Drain to Source Breakdown Voltage
    15 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • TPS1100DR.pdf
  • 6989 In Stock
  • Applications
  • Width
    3.91 mm
  • Length
    4.9 mm
  • Packaging
    Tape & Reel (TR)
  • Thickness
    1.58 mm
  • Case/Package
    SOIC
  • Contact Plating
    Gold
  • Turn-On Delay Time
    4.5 ns
  • Max Power Dissipation
    791 mW
  • Min Operating Temperature
    -40 °C
  • Gate to Source Voltage (Vgs)
    2 V
  • Drain to Source Voltage (Vdss)
    15 V

Download datasheets and manufacturer documentation for Rochester Electronics TPS1100DR

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TPS1100DR Overview

TPS1100DR is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have TPS1100DR high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. TPS1100DR is widely used in Wireless infrastructure,Hybrid, electric & powertrain systems,Infotainment & cluster. It is manufactured by Rochester Electronics and distributed by Fans, Tanssion and other distributors. TPS1100DR can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of TPS1100DR is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order TPS1100DR from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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TPS1100DR Information

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Rochester Electronics TPS1100DR technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics TPS1100DR.

Image Part Number Manufacturer Datasheet Pricing(USD) Applications Remark Package Qty
TPS1100D TPS1100D Texas Instruments

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10+: $0.9603

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Wireless infrastructure
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Home theater & entertainment

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100+: $0.9506

500+: $0.9409

1000+: $0.9312

Infotainment & cluster
Wired networking
Broadband fixed line access

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Tanssion is one of the Distributors.
Wide range of applications.

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The three parts on the right have similar specifications to Rochester Electronics TPS1100DR.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
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    1A (Ta)
    -
The three parts on the right have similar specifications to Rochester Electronics TPS1100DR
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  • TPS1100DR PDF
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