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Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IRLR3110ZPBF

IRLR3110ZPBF Rochester Electronics

IRLR3110ZPBF
  • Part Number: IRLR3110ZPBF
  • Manufacturer: Rochester Electronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
  • Datasheet:
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  • More Information: IRLR3110ZPBF More Information
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Stock : 9359 Can Ship Immediately

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Qty Unit Price
1+: $0.49

Sub Total: $0.49

Minimum: 1 Multiples: 1
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Current price of IRLR3110ZPBF is for reference only,please send email to sales@tanssion.com to get the newest price.

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IRLR3110ZPBF Information

  • Specifications
  • Datasheet
  • Product Details
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Rochester Electronics IRLR3110ZPBF technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics IRLR3110ZPBF.

  • Type
    Parameter
  • IRLR3110ZPBF
  • Manufacturer
    Rochester Electronics
  • Pricing(USD)
    $0.49
  • Remark
    Manufacturer: Rochester Electronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Height
    2.3876 mm
  • Fall Time
    48 ns
  • Rds On Max
    14 mΩ
  • Nominal Vgs
    2.5 V
  • Case/Package
    DPAK
  • Number of Pins
    3
  • Input Capacitance
    3.98 nF
  • Threshold Voltage
    2.5 V
  • Number of Elements
    1
  • Dual Supply Voltage
    100 V
  • Turn-Off Delay Time
    33 ns
  • Max Power Dissipation
    140 W
  • Min Operating Temperature
    -55 °C
  • Gate to Source Voltage (Vgs)
    16 V
  • Max Junction Temperature (Tj)
    175 °C
  • Drain to Source Breakdown Voltage
    100 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • IRLR3110ZPBF.pdf
  • 9359 In Stock
  • Applications
  • Width
    6.22 mm
  • Length
    6.7056 mm
  • Rise Time
    110 ns
  • Resistance
    14 MΩ
  • Termination
    SMD/SMT
  • Recovery Time
    51 ns
  • Package Quantity
    3000
  • Power Dissipation
    140 W
  • Number of Channels
    1
  • Turn-On Delay Time
    24 ns
  • On-State Resistance
    14 mΩ
  • Element Configuration
    Single
  • Max Operating Temperature
    175 °C
  • Drain to Source Resistance
    11 mΩ
  • Continuous Drain Current (ID)
    42 A
  • Drain to Source Voltage (Vdss)
    100 V

Download datasheets and manufacturer documentation for Rochester Electronics IRLR3110ZPBF

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IRLR3110ZPBF Overview

IRLR3110ZPBF is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IRLR3110ZPBF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. IRLR3110ZPBF is widely used in Datacom module,Connected peripherals & printers. It is manufactured by Rochester Electronics and distributed by Fans, Tanssion and other distributors. IRLR3110ZPBF can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of IRLR3110ZPBF is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order IRLR3110ZPBF from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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IRLR3110ZPBF Information

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The three parts on the right have similar specifications to Rochester Electronics IRLR3110ZPBF.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
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    1A (Ta)
    -
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