Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPB100N04S204ATMA4

IPB100N04S204ATMA4 Rochester Electronics

IPB100N04S204ATMA4
  • Part Number: IPB100N04S204ATMA4
  • Manufacturer: Rochester Electronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
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  • More Information: IPB100N04S204ATMA4 More Information
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Stock : 1242 Can Ship Immediately

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Qty Unit Price
1+: $1.38

Sub Total: $1.38

Minimum: 1 Multiples: 1
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Current price of IPB100N04S204ATMA4 is for reference only,please send email to sales@tanssion.com to get the newest price.

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IPB100N04S204ATMA4 Information

  • Specifications
  • Datasheet
  • Product Details
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Rochester Electronics IPB100N04S204ATMA4 technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics IPB100N04S204ATMA4.

  • Type
    Parameter
  • IPB100N04S204ATMA4
  • Manufacturer
    Rochester Electronics
  • Pricing(USD)
    $1.38
  • Remark
    Manufacturer: Rochester Electronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Packaging
    Tape & Reel
  • Rds On Max
    3.3 mΩ
  • Number of Pins
    3
  • Input Capacitance
    5.3 nF
  • Turn-On Delay Time
    27 ns
  • Element Configuration
    Single
  • Max Dual Supply Voltage
    40 V
  • Min Operating Temperature
    -55 °C
  • Continuous Drain Current (ID)
    100 A
  • Drain to Source Breakdown Voltage
    40 V
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • IPB100N04S204ATMA4.pdf
  • 1242 In Stock
  • Applications
  • Fall Time
    33 ns
  • Rise Time
    46 ns
  • Case/Package
    TO-263-3
  • Package Quantity
    1000
  • Power Dissipation
    300 W
  • Turn-Off Delay Time
    56 ns
  • Max Power Dissipation
    300 W
  • Max Operating Temperature
    175 °C
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Voltage (Vdss)
    40 V

Download datasheets and manufacturer documentation for Rochester Electronics IPB100N04S204ATMA4

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IPB100N04S204ATMA4 Overview

IPB100N04S204ATMA4 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPB100N04S204ATMA4 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. IPB100N04S204ATMA4 is widely used in Aerospace & defense,Power delivery,Datacom module. It is manufactured by Rochester Electronics and distributed by Fans, Tanssion and other distributors. IPB100N04S204ATMA4 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of IPB100N04S204ATMA4 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order IPB100N04S204ATMA4 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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IPB100N04S204ATMA4 Information

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The three parts on the right have similar specifications to Rochester Electronics IPB100N04S204ATMA4.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
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    -
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    ±20V
    MOSFET (Metal Oxide)
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    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
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    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
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    200 V
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  • IRF9640
    IRF9640
    Vishay / Siliconix
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    Tube
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    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
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