Tanssion > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > BSD214SNH6327

BSD214SNH6327 Rochester Electronics

BSD214SNH6327
  • Part Number: BSD214SNH6327
  • Manufacturer: Rochester Electronics
  • Description: In stock. Alternative models available.
  • Lifecycle: New from this manufacturer
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  • More Information: BSD214SNH6327 More Information
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Stock : 7126 Can Ship Immediately

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Sub Total: $0.06

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BSD214SNH6327 Information

  • Specifications
  • Datasheet
  • Product Details
  • Reviews

Rochester Electronics BSD214SNH6327 technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics BSD214SNH6327.

  • Type
    Parameter
  • BSD214SNH6327
  • Manufacturer
    Rochester Electronics
  • Pricing(USD)
    $0.06
  • Remark
    Manufacturer: Rochester Electronics.
    Tanssion is one of the Distributors.
    Wide range of applications.
  • Mount
    Surface Mount
  • Rise Time
    7.8 ns
  • Case/Package
    SOT-363
  • Package Quantity
    3000
  • Power Dissipation
    500 mW
  • On-State Resistance
    140 mΩ
  • Max Dual Supply Voltage
    20 V
  • Min Operating Temperature
    -55 °C
  • Continuous Drain Current (ID)
    1.5 A
  • Type
    Parameter
  • Products Category
    Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
  • BSD214SNH6327.pdf
  • 7126 In Stock
  • Applications
  • Packaging
    Tape & Reel
  • Rds On Max
    140 mΩ
  • Number of Pins
    6
  • Input Capacitance
    107 pF
  • Number of Elements
    1
  • Max Power Dissipation
    500 mW
  • Max Operating Temperature
    150 °C
  • Gate to Source Voltage (Vgs)
    12 V
  • Drain to Source Voltage (Vdss)
    20 V

Download datasheets and manufacturer documentation for Rochester Electronics BSD214SNH6327

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BSD214SNH6327 Overview

BSD214SNH6327 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BSD214SNH6327 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BSD214SNH6327 is widely used in Building automation,Factory automation & control,Portable electronics. It is manufactured by Rochester Electronics and distributed by Fans, Tanssion and other distributors. BSD214SNH6327 can be purchased in many ways. You can place an order directly on this website, or you can call or email us. At present, We have sufficient supplies. In addition our own stock, we can also adjust the inventory to the peer distributors to meet your needs. If the supply of BSD214SNH6327 is insufficient, we also have other models under the Discrete Semiconductor Transistors - FETs, MOSFETs - Single category to replace it. Fans provides a 1-year warranty to customers who have purchased this part to ensure that our customers have a wonderful purchasing experience and are willing to establish a long-term relationship with Fans. So you can order BSD214SNH6327 from Fans with confidence. About delivery, we can deliver goods to our customers through a variety of logistics, such as DHL, FedEx, UPS, TNT and EMS or any other freight forwarder. If you want to know more about the freight, feel free to contact us for more details.

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BSD214SNH6327 Information

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Rochester Electronics BSD214SNH6327 technical specifications,attributes, parameters and parts with similar specifications to Rochester Electronics BSD214SNH6327.

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100+: $0

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1000+: $0.4896

Gaming
Broadband fixed line access

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1+: $0

10+: $0

100+: $0

500+: $0

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The three parts on the right have similar specifications to Rochester Electronics BSD214SNH6327.

  • Image

    Part Number
    Manufacturer
    Series
    Package
    FET Type
    Vgs (Max)
    Technology
    FET Feature
    Part Status
    Mounting Type
    Package / Case
    Vgs(th) (Max) @ Id
    Operating Temperature
    Rds On (Max) @ Id, Vgs
    Power Dissipation (Max)
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Input Capacitance (Ciss) (Max) @ Vds
    Drive Voltage (Max Rds On, Min Rds On)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    View Compare
  • IRFZ20
    IRFZ20
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    100mOhm @ 10A, 10V
    40W (Tc)
    TO-220AB
    17 nC @ 10 V
    50 V
    850 pF @ 25 V
    10V
    15A (Tc)
    -
  • IRF9610
    IRF9610
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    3Ohm @ 900mA, 10V
    20W (Tc)
    TO-220AB
    11 nC @ 10 V
    200 V
    170 pF @ 25 V
    10V
    1.8A (Tc)
    -
  • IRF9640
    IRF9640
    Vishay / Siliconix
    -
    Tube
    P-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 150°C (TJ)
    500mOhm @ 6.6A, 10V
    125W (Tc)
    TO-220AB
    44 nC @ 10 V
    200 V
    1200 pF @ 25 V
    10V
    11A (Tc)
    -
  • IRFZ24
    IRFZ24
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±20V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    TO-220-3
    4V @ 250µA
    -55°C ~ 175°C (TJ)
    100mOhm @ 10A, 10V
    60W (Tc)
    TO-220AB
    25 nC @ 10 V
    60 V
    640 pF @ 25 V
    10V
    17A (Tc)
    -
  • IRLD110
    IRLD110
    Vishay / Siliconix
    -
    Tube
    N-Channel
    ±10V
    MOSFET (Metal Oxide)
    -
    -
    Through Hole
    4-DIP (0.300", 7.62mm)
    2V @ 250µA
    -55°C ~ 175°C (TJ)
    540mOhm @ 600mA, 5V
    1.3W (Ta)
    4-HVMDIP
    6.1 nC @ 5 V
    100 V
    250 pF @ 25 V
    4V, 5V
    1A (Ta)
    -
The three parts on the right have similar specifications to Rochester Electronics BSD214SNH6327
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